Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging
They characteristic a top-side cooled surface-mount package deal optimised for high-power density and thermally demanding purposes, says the corporate. For instance, EV onboard chargers (OBC), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters and uninterruptible energy provides (UPS).
“As wide-bandgap applied sciences proceed to reshape energy conversion design, the trade is dealing with a brand new set of thermal, mechanical and effectivity challenges as methods develop into smaller, denser and extra energy hungry,” says the Head of SiC & IGBT Product Group at Nexperia, Gaetano Pignataro.
“At Nexperia, we’re targeted on growing options that tackle these actual system-level challenges. Our 1200 V SiC MOSFETs in QDPAK mix the efficiency of our SiC expertise with the thermal benefits of top-side cooling, giving engineers a sensible and scalable possibility for next-generation high-power purposes.”
An extra Kelvin supply pin allows quicker commutation and improved switching management, highlights Nexperia. This helps designers handle ringing, EMI and switching transients, it says.
Obtainable in each industrial-grade and automotive-qualified variants, the portfolio gives RDS(on) choices of 17, 30, 40, 60 and 80 mΩ.
Extra data is on the Nexperia web site.